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Comparison of tunneling times in isotropic and anisotropic media

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Comparison of tunneling times in isotropic and anisotropic media

Auteurs : RBID : Pascal:13-0047222

Descripteurs français

Pascal (Inist)
- Effet tunnel, Propagation onde électromagnétique, Indice réfraction négatif, Métamatériau, Matériau optique, Milieu anisotrope, Semiconducteur, Milieu isotrope, 4270N, Arséniure de gallium et d'indium, Arséniure d'aluminium et de gallium, 4225B.

English descriptors

KwdEn :
- Anisotropic media, Electromagnetic wave propagation, Isotropic medium, Metamaterial, Negative refraction index, Optical materials, Semiconductor materials, Tunnel effect.

Abstract

We present a comparative analysis of the tunneling times of electromagnetic (EM) waves propagating in isotropic and anisotropic media. First, suitable expressions for the tunneling times in a layered periodic material, with anisotropic properties originating from its structure, are derived, followed by numerical calculations performed for a new type of anisotropic semiconductor metamaterial. In the first case, we have considered a layered structure which contains two differently doped In_0.53Ga_0.47As semiconductor layers. The second structure under investigation is made of alternately placed layers of doped In_0.53Ga_0.47As and undoped Al_0.48Ga_0.52As. The investigation of the dwell time as a function of incident wave frequency has revealed the existence of two peaks, one of which may be interpreted as a consequence of anisotropy, while the other one corresponds to the peak related to the absorption and the group delay. Both of these two peaks are affected by variations of layers' doping densities. Furthermore, at increased incident angles of incoming EM waves, the dwell time peak occurs at the upper boundary of the frequency interval, for which the structure exhibits negative refractive index.

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Pascal:13-0047222

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<author><name sortKey="Radovanovic, Jelena" uniqKey="Radovanovic J">Jelena Radovanovic</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Electrical Engineering, University of Belgrade</s1>
<s2>Belgrade</s2>
<s3>SRB</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Serbie</country>
<wicri:noRegion>Belgrade</wicri:noRegion>
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</author>
<author><name sortKey="Ilic, Igor" uniqKey="Ilic I">Igor Ilic</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Atomic Physics, Vinca Institute of Nuclear Sciences</s1>
<s2>Belgrade</s2>
<s3>SRB</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>Serbie</country>
<wicri:noRegion>Belgrade</wicri:noRegion>
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</author>
<author><name sortKey="Belicev, Petra P" uniqKey="Belicev P">Petra P. Belicev</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Atomic Physics, Vinca Institute of Nuclear Sciences</s1>
<s2>Belgrade</s2>
<s3>SRB</s3>
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<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>Serbie</country>
<wicri:noRegion>Belgrade</wicri:noRegion>
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</author>
<author><name sortKey="Milanovic, Vitomir" uniqKey="Milanovic V">Vitomir Milanovic</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Electrical Engineering, University of Belgrade</s1>
<s2>Belgrade</s2>
<s3>SRB</s3>
<sZ>1 aut.</sZ>
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<country>Serbie</country>
<wicri:noRegion>Belgrade</wicri:noRegion>
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<author><name sortKey="Hadzievski, Ljup O" uniqKey="Hadzievski L">Ljup O Hadzievski</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Atomic Physics, Vinca Institute of Nuclear Sciences</s1>
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<title level="j" type="abbreviated">Appl. phys., A Mater. sci. process. : (Print)</title>
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<term>Electromagnetic wave propagation</term>
<term>Isotropic medium</term>
<term>Metamaterial</term>
<term>Negative refraction index</term>
<term>Optical materials</term>
<term>Semiconductor materials</term>
<term>Tunnel effect</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Effet tunnel</term>
<term>Propagation onde électromagnétique</term>
<term>Indice réfraction négatif</term>
<term>Métamatériau</term>
<term>Matériau optique</term>
<term>Milieu anisotrope</term>
<term>Semiconducteur</term>
<term>Milieu isotrope</term>
<term>4270N</term>
<term>Arséniure de gallium et d'indium</term>
<term>Arséniure d'aluminium et de gallium</term>
<term>4225B</term>
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<front><div type="abstract" xml:lang="en">We present a comparative analysis of the tunneling times of electromagnetic (EM) waves propagating in isotropic and anisotropic media. First, suitable expressions for the tunneling times in a layered periodic material, with anisotropic properties originating from its structure, are derived, followed by numerical calculations performed for a new type of anisotropic semiconductor metamaterial. In the first case, we have considered a layered structure which contains two differently doped In<sub>0.53</sub>
Ga<sub>0.47</sub>
As semiconductor layers. The second structure under investigation is made of alternately placed layers of doped In<sub>0.53</sub>
Ga<sub>0.47</sub>
As and undoped Al<sub>0.48</sub>
Ga<sub>0.52</sub>
As. The investigation of the dwell time as a function of incident wave frequency has revealed the existence of two peaks, one of which may be interpreted as a consequence of anisotropy, while the other one corresponds to the peak related to the absorption and the group delay. Both of these two peaks are affected by variations of layers' doping densities. Furthermore, at increased incident angles of incoming EM waves, the dwell time peak occurs at the upper boundary of the frequency interval, for which the structure exhibits negative refractive index.</div>
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<fC01 i1="01" l="ENG"><s0>We present a comparative analysis of the tunneling times of electromagnetic (EM) waves propagating in isotropic and anisotropic media. First, suitable expressions for the tunneling times in a layered periodic material, with anisotropic properties originating from its structure, are derived, followed by numerical calculations performed for a new type of anisotropic semiconductor metamaterial. In the first case, we have considered a layered structure which contains two differently doped In<sub>0.53</sub>
Ga<sub>0.47</sub>
As semiconductor layers. The second structure under investigation is made of alternately placed layers of doped In<sub>0.53</sub>
Ga<sub>0.47</sub>
As and undoped Al<sub>0.48</sub>
Ga<sub>0.52</sub>
As. The investigation of the dwell time as a function of incident wave frequency has revealed the existence of two peaks, one of which may be interpreted as a consequence of anisotropy, while the other one corresponds to the peak related to the absorption and the group delay. Both of these two peaks are affected by variations of layers' doping densities. Furthermore, at increased incident angles of incoming EM waves, the dwell time peak occurs at the upper boundary of the frequency interval, for which the structure exhibits negative refractive index.</s0>
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<fC03 i1="01" i2="3" l="ENG"><s0>Tunnel effect</s0>
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<s5>41</s5>
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<s5>57</s5>
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<s5>62</s5>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Metamaterials, Photonic Crystals and Plasmonics (META'12)</s1>
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<s4>2012-04-19</s4>
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Comparison of tunneling times in isotropic and anisotropic media

Comparison of tunneling times in isotropic and anisotropic media

Descripteurs français

English descriptors

Abstract

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